Atomic Level Solutions~R for Advanced Microelectronic Applications

摘要：

Atomic Layer Deposition (ALD) has successfully been applied to advanced microelectronic applications importantly for conformal coatings on high aspect ratio devices. However,traditional ALD is limited in deposition rate because the ability to bring precursors rapidly to the surface. In this paper we review recent results for precursor delivery using advanced vaporization (Trijet) as well as recent advances in Pulsed CVD (AVD~R) using art elements held in common with ALD technology. These and other advances -such as Multiple Single Wafer configurations allow ALD application for continued scaling under conditions of improved process control and higher productivity. Key applications include: capacitors (dielectrics and electrodes),transistors and contacts. This paper reviews these technological advances in the context of their applications.

作者: Yoshi Senzaki H.Silva M.Daulesberg T.Seidel J.McCormick G.Y.Kim H.Y.Kim Z.Karim B.Lu S,Ramanathan J.Lindner

作者单位: AIXTRON,1139 Karlstad Drive,Sunnyvale,CA 94089,USA AIXTRON,15-17Kackerstr.,Aachen,52072 Germany

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1308-1311

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）