Atomically Controlled CVD Processing for Future Si-Based Devices
One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here,we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. On the atomic-order surface nitridation of Si(1-x)Gex,it is suggested that nitridation of Si atoms proceeds by transfer of N atoms from Ge atoms at the surface by heat-treatment. The B atomic-layer doping result suggests that atomic-order Si capping on the B atomic layer already-formed on (100) surface at low temperatures such as 180-300 ℃ improves the electrical aclivil.v even with the subsequent Si capping at 500 ℃. Additionally,it is confirmed that the band engineering for group IV semiconductors becomes possible by the strain control of the Si(1-x)Gex/Si heterostructurc due to striped patterning. These results demonstrate the capability of the atomically controlled CVD processing approach for future Si-based devices.
Junichi Murota Masao Sakuraba Bernd Tillack
Laboratory for Nanoelectronics and Spintronics,Research Institute of Electrical Communication,Tohoku IHP.Im Technologicpark 25.15236 Frankfurt (Oder).Germany
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
1312-1315
2008-10-20(万方平台首次上网日期,不代表论文的发表时间)