Ultimate Top-down Etching Processes for Future Nanoscale Devices

摘要：

For the past 30 years,plasma etching technology has led in the efforts to shrink the pattern size of ultra-large-scale integrated (ULSI) devices. However,inherent problems in the plasma processes,such as charge buildup and UV photon radiation,limit the etching performance for nanoscale devices. To overcome these problems and fabricate sub-10-nm devices in practice,neutral-beam etching has been proposed. In this paper,we introduce the ultimate etching processes using neutral-beam sources and discuss the fusion of top-down and bottom-up processing for future nanoscale devices. Neutral beams can perform atomically damage-free etching and surface modification of inorganic and organic materials. This technique is a premising candidate for the practical fabrication technology for future nano-devices.

作者: Seiji Samukawa Tomohiro Kubota

作者单位: Institute of Fluid Science,Tohoku University,2-1-1 Katahira,Aoba-ku,Sendai,Miyagi,980-8577,Japan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1316-1319

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）