Low-K Breakdown Improvement in 65nm Dual-Damascene Cu Process

摘要：

Leakage and breakdown characteristics of low-k dielectrics are becoming increasingly infiortant reliability issues for Cu interconnects as device dinensicms are scaled. Especially,in 65nm dual-damascene Cu process,low-k dielectric has diffioulty in meethg a breakdown spec of 50V on cumulative curve at 0.1% intersection. Both dual-damascene metal dimension process unfonmity control and interface integriy between Cu and HDC cap layer (SiCN) control are highly important in the 65nm bw-k dielectric breakdownre linbility.

作者: Qi Wang Howard Gan Linlin Zhao Kevin Zheng Emily Bei Jay Ning

作者单位: Logic Techno bgy Deve lopment,Semiconductor Manufacturing International Corporation,Beijing 100176,PR.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1324-1327

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）