Influence of surfactant on Si111 etched surface

摘要：

The anisotropy etched technique of single crystal silicon in alkaline solution with high pH value has become one of the key technique for MEMS development. Production of smooth,defect-free silicon surface is essential for fabrication of all kinds of devices. In order to gain optimal silicon etched surface,non-ion surfactant was added in silicon111 etchants,and its concentration was different and over than CMC(Critical Micelle Concentration). From the experiment results,it can be seen that the etched n-Si111 surface was improved with increasing concentration of surfactant. Using such method the optimal etched surface can be gotten.

作者: Xinhuan Niu Baimei Tan Simiao Zong Yuling Liu

作者单位: Institute of Microelectronics,Hebei University of Technology,Tianjin 300130,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1332-1335

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）