Theoretical study of low-energy electron penetration in resist-substrate target by Monte Carlo simulation
Low-energy electron beam lithography has a variety of advantages. The traditional electron scattering model consisting of Rutherford elastic scattering cross section and Bethe continuous slowing down approximation formula are not suitable for low-energy electron beam lithography. A more accurate physical model describing the low-energy electron scattering processes was proposed in this work. And Monte Carlo method was used to simulate the complex scattering processes of Gaussian-distribution low-energy electron beam in the target of thin film on thick substrate. The simulation results show that low-energy electron beam lithography has advantages of high throughput,low proximity effects and small damage to the underlying substrate. It is in agreement with the conclusion got from Lee et als and Peterson et als experiments.
Liming Ren Baoqin Chen Ru Huang Xing Zhang
Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking Universi Institute of Microelectronics of the Chinese Academy of Sciences,Beijing,100029,P.R.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
1336-1339
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）