Gate Ozide Breakdown Location Effect on Power Amplifier and Mized-Signal Circuits

摘要：

Gate oxide breakdown location effect on the class AB power amplifier and mixed-signal sample-and-hold circuit have been studied. The soft breakdown has minor effect on the performance of power amplifier and sample-hold circuit,while the hard breakdown at the drain side reduces power efficiency of class AB power amplifier and degrades signal to noise ratio of sample-and-hold circuit significantly.

作者: J.S.Yuan J.Ma

作者单位: School of Electrical Engineering and Computer Science,University of Central Florida,Orlando,Florida 32816,U.S.A.

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1365-1368

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）