Two 130nm CMOS Class-D RF Power Amplifiers suitable for Polar Transmitter Architectures

摘要：

Two class-D RF power amplifiers consisting of CMOS inverter chains have been designed and measured. The first amplifier operates at lGHz and has a maximum output power of 12dBm,whereas the second operates at l.SGHz and outputs a maximum of 6dBm. The amplifiers have been characterized for use in two different polar transmitter architectures,Pulse Width Modulation by Variable Gate Bias (PWMVGB) and Envelope Elimination and Restoration (EER). Using a standard 130mn digital CMOS process and off-chip passive components,maximum drain efficiencies of 32% and 39%,respectively,are achieved. The two amplifiers are compared with respect to output power and drain efficiency,including a qualitative analysis of losses. Moreover,their use in the two polar transmitter architectures is discussed.

作者: Ellie Cijvat Henrik Sj(o)land

作者单位: Dept.of Electrical and Information Technology,Lund University,Sweden

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1380-1383

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）