A Miniaturized High-Efficiency GaAs HBT Power Amplifier Used in TD-SCDMA Handset Application

摘要：

This paper is the first to report a monolithic HBT power amplifier for TD-SCDMA cellular phones which achieves a high efficiency and linearity. The two-stage MMIC integrates input and interstage matching circuits,and active bias circuits in a single chip with a chip size as small as 0.91×0.98 mm2. The amplifier obtains a power-added efficiency (PAE) of 43% (16%) and 28.5 dB (23.8 dB) of the gain at the high and low operation mode under the 3.4 V supply. In addition,the adjacent channel leakage power is below -39 dBc and -48 dBc at 1.6 MHz and 3.2 MHz offset respectively with QPSK modulation. The MMIC offers the potential both for low cost production due to small chip size,stable voltage supply,and high performance at the same time.

作者: Bi Xiaojun Zhang Haiying Huang Qinghua Chen Liqiang Yin Junjian

作者单位: Institute of Microelectronics,Chinese Academy of Science,Beijing 100029,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1384-1388

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）