InGaP/GaAs HBT MIC Power Amplifier with Power Combining at C-band

摘要：

A HBT MIC power amplifier withpower combining based on InGaP/GaAs HBT was developed and measured for the application of C-band. The amplifier consists of two 2×480μm emitter area InGaP/GaAs HBT power transistors. Microstripe line parallel matching networks were used to divide and combine the power. A parallel RC stabilization network was used to suppress the self-oscillation. By biasing the amplifier at Vcc=9V,Ic=240mA,the maximum CW output power of 32.7dBm(1.8w) with a maximum power added efficiency (PAE) of 43% was achieved at 6.4GHz.

作者: Yanhu Chen Huajun Shen Gaopeng Chen Xinyu Liu Dongfeng Yuan Zuqiang Wang

作者单位: The school of Information Science and Engineering,Shan Dong University,Jinan,China Institute of Microelectronics of Chinese Academy of Science,Beijing,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1418-1420

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）