Aspect Ratio Trapping Heteroepitazy for Integration of Germanium and Compound Semiconductors on Silicon

摘要：

Heterogeneous integration of high quality germanium and compound semiconductors onto large-size low-cost substrates holds great promise to improve the performance and functionality of silicon-based CMOS logic beyond Moores Law,as well as to reduce the cost of compound semiconductor-based devices and circuits. In this article,the Aspect Ratio Trapping heteroepitaxy technique,a recently developed approach for integration of highly mismatched semiconductor materials,is presented. Its potential applications in Si-based CMOS,and in compound semiconductor-based electronics and optoelectronics device,are also discussed.

作者: Zhiyuan Cheng Ji-Soo Park Jie Bai Jizhong Li Jennifer Hydrick James Fiorenza Anthony Lochtefeld

作者单位: AmberWave System Corporation,13 Garabedian Dr,Salem,NH 03079,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1425-1428

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）