High-performance Ⅲ-V MOSFETs enabled by atomic layer deposition

摘要：

ALD, as a state-of-the-art oxide formation technique, provides unprecedented opportunity to study various deposited oxides or insulators on III-V materials. The interface property of oxides or insulators on III-V compound semiconductors is a very complex problem. The underlying reasons for these above experimental observations mostly are not well-understood. To find an excellent dielectric and gate stack on III-V materials in general still remains a big challenge for material and device research community.

作者: Peide D.Ye

作者单位: School of Electrical and Computer Engineering,Purdue University,West Lafayette,IN 47906,U.S.A.

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1429-1432

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）