The Frequency Limits of Field-Effect Transistors:MOSFET vs. HEMT

摘要：

An overview on the current understanding of the frequency limits (in terms of the cutoff frequency fT) of FETs is provided. Main factors affecting fT in MOSFETs and HEMTs are discussed and the effects of material properties and FET design on fT are examined. In particular,the role of channel mobility,density of states,and of the design of the gate-channel barrier is discussed. We show that the MOSFET concept has some inherent advantages regarding the fT limits compared to HEMTs.

作者: Frank Schwierz

作者单位: Institute of Micro-and Nanoelectronics,Technical University Ilmenau,98684 Ilmenau,PF 100565,Germany

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1433-1436

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）