Development of Passive Devices in 130 nm RFCMOS Technology and PDK Implementation for RF VCO Designs

摘要：

This paper focuses on the design of RF component design such as MOSFETs,varactors,capacitors and inductors in SMC 0.13um RFCMOS technology. Modeling results of these passives devices and associated PDK are implemented in a 0.13um RFCMOS VCO design. The RF building block has been fabricated from 130 nm CMOS technology and achieved a phase noise of -140.8dBc/Hz@1MHz at a current coasumption of 14mA.

作者: Xinzhong Duo Tinghuang Lee Paul Wen Lindsay Kang Tweeg Chen Paul Zhu Li-Wu Yang

作者单位: Semiconductor Manufacturing International (Shanghai) Corp.,Shanghai,201203,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1468-1471

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）