A Low Power SiGe HBT LNA Utilizing Serial Inductance for Wideband Matching

摘要：

A UWB LNA (low noise amplifier) based on 0.35μm SlGe BlCMOS technology is presented in this paper. This LNA adopts a resistance feedback topology to optimize the gain and noise figure. The serial inductance at the base is used to matching input impedance and decreasing group delay variation. The simulation results indicate that the gain of LNA reaches 12.5dB with the variation of 1.9dB and the power consuming is 6.3mW in full band from 3.1GHz to 10 6GHz. This SiGe UWB LNA exhibits less than 5ps group delay variation and less than 3.85dB NF over the entire band.

作者: Lu Huang Ning Hu Wan-Rong Zhang Hong-Yun Xie Jia Li Wei Zhang Yang Wang Pei Shen Jun-Ning Gan Yi-Wen Huang

作者单位: College of Electronic Information and Control Engineering Beijing University of Technology,Beijing 100124,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1500-1503

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）