A Highly Linear Wideband CMOS LNA Adopting Current Amplification and Distortion Cancellation

摘要：

This paper presents a highly linear wideband low-noise amplifier (LNA) adopting the current amplification and distortion cancellation,it exploits the noise cancellation for the low-noise,and employs a low second-order distortion PMOS/NMOS input pair and the current mirror amplifier in order to highly improve the linearity. The proposed CMOS LNA exhibits a power gain of 16.0 dB,an IIP3 of 9.5 dBm,and an average noise figure of 2.9 dB with 24.4 mW power consumption at a 1 8V power supply. The LNA was designed in a 0.18-μ m RF CMOS process.

作者: Rongwen Xu Lingling Sun Jincai Wen

作者单位: Key Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,Hangzhou, Key Laboratory of RF Circuits and ystems,Ministry of Education,Hangzhou Dianzi University,Hangzhou,Z

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1512-1515

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）