23 GHz Fully Integrated CMOS Synthesizer

摘要：

A fully Integrated 23GHz CMOS PLI^based synthesizer is prevented. This-circuit combines push-push oscillator with a latch based divider to achieve low-power dissipation and a small die. The circuit was designed in 130 nm bulk CMOS process from ST Microelectronics. The synthesized range is from 22 GHz up to 24.2 GHz,the power dissipation is 58 mW under 1.0 V power supply. The measured phase noise is better than -95 dBc/Hz at 1 MHz of the carrier with a 575 MHz reference frequency.

作者: O.Mazouffre Y.Deval B.Goumballa D.Bclot J.B.Begueret

作者单位: IMS Laboratory -University of Bordeaux 1 -France STMicroelectronics,Grenoble,France

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 1581-1584

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）