Mask Synthesis for 65nm SRAM Manufacturing Using Gradient-based Inverse Lithography Technology (ILT)

摘要：

Inverse Lithography Technology (ILT) is a promising solution to enhance the resolution of the optical system in deep-subwavelength lithography. In this paper,we introduce a gradient-based framework for mask synthesis. Firstly,we model the mask-to-wafer process using a continuous transfer function. Then Newton iterations are employed to solve the continuous inverse problems. Finally,we apply our framework to the mask synthesis for 65nm SRAM manufacturing. The simulation results show that the optimized masks can be efficiently obtained and good fidelity in patterning is achieved.

作者: Wei Xiong Jinyu Zhang Min-Chun Tsai Yan Wang Zhiping Yu

作者单位: Institute of Microelectronics,Tsinghua University,Beijing 100084,P.R.China Advanced Technology Group,Synopsys Inc.,Mountain View,CA94043,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 2276-2279

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）