Co-integration of Silicon Nanodevices and NEMS for Advanced Information Processing

摘要：

In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM) structures into conventional silicon nanodevices. Firstly,we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles.

作者: Hiroshi Mizuta Tasuku Nagami Jun Ogi Benjamin Pruvost Mario A.G.Ramirez Hideo Yoshimura Yoshishige Tsuchiya Shunri Oda

作者单位: NANO Group,School of Electronics and Computer Science,University of Southampton,UK Quantum Nanoelectronics Research Center,Tokyo Institute of Technology,Japan NANO Group,School of Electronics and Computer Science,University of Southampton,UK Graduate School o

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 2375-2378

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）