In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator
Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectromechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators,the low residual stress and low resistivity are desired for the polysilicon thin films. In the present work,we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (LPCVD) polysilicon films. Low residual stress (-100 MPa) was achieved in in-situ boron-doped polysilicon films deposited at 570℃ and annealed at 1000℃ for 4 hr. The as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation,the low tensile residual stress is expected for this annealed film,the detailed description on this work will be reported soon. The controllable residual stress and resistivity make these films suitable for high-Q and high-f micro-mechanical disk resonators.
Yunfei Liu Jing Xie Jinling Yang Longjuan Tang Fuhua Yang
Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,P.R.China State Key Laborator Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,P.R.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
2387-2390
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）