Piezoresistive Sensor of Short- and Long- Channel MOSFETs on (100) Silicon

摘要：

This study evaluated metal oxide semiconductor field-effect transistor (MOSFETs) with channel lengths/widths of 0.135/10,0.45/10,and 10/10μm for both the n-and p-channel types used as sensing elements. The results show that the devices with channel lengths/widths of 0.45/10 and 10/10μm have flat saturation current. It suggests that there is a requirement for a device to have a channel length of over 0.45μm to provide better sensing characterization to normalized current change. The experimental result also demonstrates the fine linear dependence of stress distribution to the distance of tested devices from the clamping end for a silicon cantilever. The stress distribution is detected via normalized current change for all the three sizes of channel length and for both the n-and p-types. Moreover,the device with larger channel length has better stress sensitivity than that with the smaller one,when the channel width is fixed at 10μm.

作者: Wen-Teng Chang Jian-An Lin Wen-Kuan Yeh

作者单位: Department of Electrical Engineering,National University of Kaohsiung,Taiwan,China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 2395-2398

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）