Effects of Different Si3N4 Thicknesses on the Performance of PECVD SiO2/Si3N4 Double Layers Electrets
In this paper,charge decay of PECVD SiO2/Si3N4 double layers electrets with different thicknesses of Si3N4 under different environmental conditions was investigated. Single layers of PECVD prepared SiO2 and Si3N4 were also studied. Double layers electrets exhibits better charge stability than single layer under different conditions. As for the double layers with 2nm-100nm Si3N4,their charge stability at 250℃ is as good as each other. However,if the Si3N4 thickness continues to increase,the charge stability will be decreased. Thicker layer of Si3N4 leads to better charge stability under 95%RH. Heat treatment at 250℃ can improve charge stability under high humidity condition,especially for double layers electrets with thin Si3N4. After heat treatment at 250C for 3hrs,the PECVD SiO2/Si3N4 double layers electrets with 50nm Si3N4 show the optimized charge stability under different conditions.
Electrets SiO2/Si3N4 Double Layers PECVD Si3N4 thickness
Zhiyu Chen Xudong Zou Jinwen Zhang
National Key Laboratory of Nano/Micro Fabrication Technology Institute of Microelectronics,Peking University,Beijing 100871,P.R.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
2412-2415
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）