Optimization of Macropore Silicon Morphology Etched by Photo-Electrochemistry
Macropore silicon etching with photo-electrochemistry was carried out under different experimental conditions,including etching voltage,current density and wave length of optical source et al. The surface,diameter of pore and wall of the macropore silicon were observed with Scanning Electronic Microscope (SEM) and Metallographic Microscope. The influencing factors on morphology of pore were analyzed. Experimental parameters for fabricating high properties macropore silicon were also determined. Macropore silicon with depth of pores up to 300 μm and aspect ratios more than 75 was etched with photo-electrochemistry.
macropore silicon etching electrochemistry
Guozheng Wang Shencheng Fu Yanjun Gao Ye Li Xin Wang Qingduo Duanmu
School of Science,Changchun University of Science and Technology,Changchun 130022,P.R.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
2416-2419
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）