A Novel Application of Anodic Bonding for Electrical Interconnect and Its Parameter Characterization
In this paper,Si-Au/Pt/Ti contact structure is fabricated using anodic bonding to realize the electrical interconnect. In order to evaluate the quality of contact structure,the contact resistance is extracted. At first,the cross-bridge Kelvin method is optimized and a new four-terminal bonded vertical Kelvin test structure is presented to directly and precisely measure the contact resistance. A two-dimensional resistor network model is established to obtain the relationship between the contact resistance and the measured resistance. Then the fabricated test structure is tested and moreover the contact resistance of the bonded Si/Au/Pt/Ti contacts is extracted from the current-voltage characteristic curves. Data obtained from the test indicate that the bonded contact is ohmic contact and the average value of Re range from 19.7 to 48.3Ω when the contact area,Ac,is larger than 20*20μm2 with contact length,L,longer than 20um; whereas,when Ae is small than 20*20μm,the contact is not reliable ohmic contact and the I-V characteristic is not stable.
anodic bonding contact resistance bonded vertical Kelvin method
Xuejiao Fan Dacheng Zhang
Institute of Microelectronics,Peking University,Beijing 100871,P.R.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
2420-2423
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）