Electrochemically Etched Pore Array in Silicon with Large Spacing and High-aspect-ratio

摘要：

Based on electrochemical etching with illumination from backside,we present a novel fabrication technique which can produce pore array in silicon with large pore spacing and high-aspect-ratio,and the regularly distributed pore array with both spacing and depth of up to several hundred micrometers can be achieved. The difficulties have been investigated according to the mechanism of macroporous silicon formation,and the primary design guidelines of the mask and the processing environment are given.

作者: Rui Qi Ruifeng Yue

作者单位: Tsinghna National Laboratory for Information Science and Technology Institute of Microelectronics,Tsinghua University,Beijing 100084,P.R China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 2424-2427

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）