Wafer bonding with intermediate parylene layer

摘要：

In this paper,wafer bonding using Parylene as the adhesive layer is investigated. The experiments are carried out under various conditions in two approaches: Parylene-to-Parylene and Parylene-to-Silicon. By heating at 230℃ and applying a bonding force in vacuum environment,both Parylene-Parylene and Parylene-Silicon are successfully bonded. The bonding quality is characterized by the joint area and the bonding strength. The results show that there is no significant difference on the bonding qualities between the two bonding approaches. Process parameters,such as film thickness,bonding force,are evaluated. The maximum bonding strength is 2.38MPa,which is adequate for certain applications.

作者: Qiong Shu Xianju Huang Ying Wang Jing Chen

作者单位: Institute of Microelectronics,Peking University,Beijing 100871,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 2428-2431

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）