Defect modes around low-lying phonon in Ag β-Alumina by Raman scattering with high resolution
Raman spectra for low-lying phonons of Ag β-alumina were measured in the temperature range of 30 K-280 K. The broad band of the low-lying phonon was found to contain three Lorentz bands by a double monochrometer with high resolution (ΔE=1 cm-1). Well resolved three bands correspond to the previous Raman results observed from the isomorphous β-alumina of K, Tl or Rb. The decomposed low-lying phonon of Ag β-alumina shows that the band width broadens with an increase in temperature clearly. The damping energy obtained from the Raman line-width of the low-lying phonon was estimated to be 0.51 meV at 30 K. It is in excellent agreement with the value 0.55 meV at 30 K from the femtosecond time-resolved observation.
Ag β-alumina Low-lying phonon Raman Defect mode
O.Kamishima Y.Iwai J.Kawamura T.Hattori
Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Department of Applied Physics, Tokyo University of Science, Tokyo 162-8601, Japan
国际会议
The 16th International Conference on Solid State Ionics(第十六届国际固态离子学会议)
上海
英文
780-782
2007-07-01（万方平台首次上网日期，不代表论文的发表时间）