Phase formation and stability of polycrystalline NazGa4+zTi1-zO8, (z~0.7)
The formation and stability of polycrystalline NaxGa4+xTi1-xO8, (x~0.7) was examined. High temperature x-ray diffraction (HTXRD) showed that NaxGa4+xTi1-xO8, (x~0.7), begins to form from component oxides and carbonates at ~950℃ and shows complete reaction within 24 h while being held at 1050℃. The desired Na0.7Ga4.7Ti0.3O8 phase remains only nominally phase pure with residual gallium oxide identifiable. Further heating of the reacted material results in the decomposition of the material beginning at ~1200℃ in which Ga2O3 and other intermediate phases are seen in the diffraction pattern.
Sodium gallium titanate 1-D conductors Beta-gallia-rutile intergrowths Alkali-ion conductors
Jake W.Amoroso Doreen D.Edwards
School of Engineering at Alfred University, N.Y.S.College of Ceramics, 2 Pine St., Alfred, NY 14802 United States
国际会议
The 16th International Conference on Solid State Ionics(第十六届国际固态离子学会议)
上海
英文
878-880
2007-07-01(万方平台首次上网日期,不代表论文的发表时间)