Recent calculations and measurements of I-V relations in simple devices based on thin nano versus thick layers of semiconductors with mobile acceptors or donors
The I-V relations found for the system metal|semiconductormetal with chemically inert electrodes are not always as one would expect from the common theory of semiconductivity. The problem can be traced back to motion of ionic defects, i.e. the acceptors (or donors) in the semiconductor. We here discuss the parameters, equations and physical constraints that have to be taken into consideration when evaluating the I-V relations of that system in the presence of motion of the ionic defects. For comparison another model, that of electron hopping in the band of dopant impurity states, is also discussed. I-V relations and the defect distributions depend on three main factors: the contact potentials at the semiconductor/metal-electrode, the thickness of the sample and the degree of ionization of the dopant. A variety of I-V relations are obtained for different values of the controlling parameters. This explains the diversity in the I-V relations reported for systems of the form metal|semiconductor|metal.
I-V relations Mobile defects Aging Nano thin devices MIEC
Y.Gil O.M.Umurhan Y.Tsur I.Riess
Physics Department,Technion-IIT,Haifa,32000,Israel Physics Department,Technion-IIT, Haifa,32000,Israel Chemical engineering,Technion-IIT, Haifa, 32000, Israel
国际会议
The 16th International Conference on Solid State Ionics(第十六届国际固态离子学会议)
上海
英文
1187-1193
2007-07-01（万方平台首次上网日期，不代表论文的发表时间）