Fast ion transport in nanoscaled thin film cerium ozide
(0) Dense CeO2 layers of 350 nm thickness, with columnar grains of size 25 nm, were RF-sputtered on silicon. 18O isotope exchange in the temperature range from 200 to 575℃ showed surface exchange at CeO2 as the rate-determining step, while diffusion through the polycrystalline thin layer was fast. The surface exchange coefficients controlled by surface or grain boundary processes were found to be ks=2.7×10-8 exp(-0.3eV/kT)cms-1 or k(gb)=1×10-9 exp(-0.3eV/kT)cms-1. Comparison with literature data on doped ceria revealed that surface exchange could be dominated by grain boundary processes. A lower limit for the diffusion coefficient was determined as 10-15 cm2 s-1 at 575℃.
Ceria Nanocrystals Ozygen surface ezchange SIMS Thin film
Sathya Swaroop Martin Kilo Anna Eden Kossoy Igor Lubomirsky Ilan Riess
Faculty of Natural and Materials Sciences.Institute for Metallurgy, Clausthal University of Technolo Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel Physics Department, Technion -IIT, Haifa 32000, Israel
国际会议
The 16th International Conference on Solid State Ionics(第十六届国际固态离子学会议)
上海
英文
1205-1208
2007-07-01（万方平台首次上网日期，不代表论文的发表时间）