Production of EUV Power with SECRAL
The high power EUV source is one of key issues in the development of EUV lithography which is considered to be the most promising technology among the next generation lithography.However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product.Insufficiency of DPP and LPP motivate the investigation of other means to produce the EUV radiation required in lithography.ECR plasma seems to be one of the alternatives.In order to investigate the feasibility of ECR plasma as a EUV light source.the EUV power emitted by SECRAL was measured.A EUV power of 1.03W in 4π sr solid angle was obtained when 2000W 18GHz rf power was launched,and the corresponding CE was 0.5％.Considering that SECRAL is designed to produce very high charge state ions.this very preliminary result is inspiring.Room-temperature ECR plasma and Sn plasma are both in the planned schedule.
EUV light source ECR plasma EUV power
赵环昱 赵红卫 孙良亭 张雪珍 盛六四 田扬超 张国斌
国际会议
The 17th International Workshop on ECR Ion Sources and Their Application(第17届国际ECR离子源研讨会)
兰州
英文
229-231
2006-09-17（万方平台首次上网日期，不代表论文的发表时间）