会议专题

A Study on the Improvement of Adhesion between Cu and Polyimide Interface by Ion-Assisted Surface Modification Method

An improvement of the interfacial adhesion between Cu and polyimide has received a great deal of attention due to the rapid development of electronic devices employing flexible printed circuit board such as mobile phone, PDA, PMP, flat-panel display, etc. Among the widely known methods, IAR (Ion Assisted Reaction) using low energy ion beam irradiation under reactive gas environment showed the remarkable result on the improvement of interfacial adhesion between Cu and polyimide without structural damage. It is believed that the improved adhesion strength is originated from the increased hydrophilic functional groups formed on the modified polyimide surface. In this study, the factors affecting the interfacial adhesion such as ion dose, acceleration voltage, and the reaction gas are discussed. The chemical structures of polyimide surface before and after IAR are analyzed. The possible interaction between modified polyimide surface and sputtered Cu layer is also discussed. Peel strength between Cu and polyimide is measured by UTM(Universal Testing Machine) to evaluate the interfacial adhesion. SEM and XPS are used to analyze the physical roughness and the chemical structure of the polyimide surface. Contact angle measurements are also done to evaluate the surface energy change of polyimide surface before and after the IAR treatment

Taehoon Kim Jong-Seok Song Dong-Sun Kim

Samsung Electro-Mechanics Inc.Suwon,Korea

国际会议

第十一届世界电子电路大会

上海

英文

2008-03-17(万方平台首次上网日期,不代表论文的发表时间)