A study on the additive effect on the anisotropic etching for fine pattern formation
Cu etching process is considerably important process in electronics industry, particularly in the fabrication of printed circuit board. Various etchants can be used for this purpose and cupric chloride is mainly used because of its high etch rate and easy regeneration properties. However, due to isotropic characteristic (lateral etching is inevitable) of wet etching process, different process such as semi additive process (SAP) mainly used to make pattern under Line / Space (L/S) = 40 um / 40 um. It is important to make fine Cu pattern in etching process from economic point of view. In this study, polyelectrolyte as anisotropic additive in Cu etching process with using CuCl2 has been investigated. The effect of additive type on the etch rate, lateral etching and etch factor of Cu were examined. In particular, by using polyelectrolyte which has ethylene oxide (EO) chain, lateral etching was reduced and fine Cu pattern under L/S = 35/35 was obtained without any modification of facility and process condition. The group with OH part of additive has effect on fine dispersion of metal and complex ion in concentrated solution. As a result, by control of degree of complex between etching component (CuC2, HCl and H2O2), we could achieve uniform etching rate. In conclusion, this tendency plays important role in Cu etching process for fine pattern. This would make the overall manufacturing cost low and fine pattern via etching process. Keywords: subtractive process, etching, fine pattern, additive, polyelectrolyte.
Younggeun Park Min Soo Kim Lee Jung Han Soon Jin Cho Chang Seop Ryoo
Samsung Electro-Mechanics,＃314,Maetan-3-dong,YeongTong-gu, Suwon City,Gyeonggi Do,Korea (ROK) Samsung Electro-Mechanics,＃314,Maetan-3-dong,YeongTong-gu,Suwon City,Gyeonggi Do,Korea (ROK)
国际会议
上海
英文
2008-03-17（万方平台首次上网日期，不代表论文的发表时间）