All Layer IVH Structure Substrate Using Organic Film

摘要：

The multilayer thin substrate that can be mounted efficiently in the limited space is needed for the advanced devices. In order to satisfy this requirement, we have developed new build-up substrate and process using aramid film CCL for build-up material. The developed substrate achieves 100 micron in thickness of 4 layer-substrate, and has low CTE and high tensile modulus. Especially, the average CTE in the temperature range 0-250 deg.C achieved 5.5 ppm/deg.C, which is close to that of silicon. We also studied the warpage of substrate by shadow moiré technique. From this study, it is suggested that developed substrate has good coplanarity after die-mounting and the smallest warpage displacement under reflow process. The structure that aramid film is located on the surface layer could be effective for inhibition of substrate warpage.

关键词： aramid package substrate 3-D staking PoP IVH low CTE warpage

作者: Shogo HIRAI Fumio ECHIGO

作者单位: Material and Process Laboratory,Corporate Components Development Center,Panasonic Electronic Devices Co.,Ltd.Osaka 571-8506 Japan

会议类型: 国际会议

会议名称: 第十一届世界电子电路大会

会议地点: 上海

会议语种:英文

在线出版日期: 2008-03-17（万方平台首次上网日期，不代表论文的发表时间）