Latest Technical Trends for Ultrathin Dry Film Photoresist
A series of ultrathin dry film photoresists (DFs) has been developed for fine conductive patterns. An ultrathin DF with a conventional 3-layer structure provided sufficient resolution (L/S = 5/5 um after development) to enable application for conductive patters of 25 um pitch or lower. A 4-layer DF enabled even higher resolution (L/S = 2/2 um) with a resist layer of 3 um thickness. The entrapment of minute pockets of air between the resist layer and the substrate (“lamination air voids) was effectively suppressed by controlling the lamination process and modifying the DF structure. Finally, we report a new type of DF with improved adhesion property on molybdenum (Mo) substrate. The new DF also displayed excellent etching and stripping properties in the formation of fine Mo/Al electrodes, enabling its application for thin film transistor (TFT) electrode manufacturing.
Yuzo Kotani Tsutomu Igarashi Shoichiro Tonomura
Asahi Kasei EMD Corporation Fuji,Shizuoka,Japan
国际会议
上海
英文
2008-03-17（万方平台首次上网日期，不代表论文的发表时间）