Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO2 Nanorod-Array Patterned Sapphire Substrates by MOCVD
High efficiency GaN-based light-emitting diodes (LEDs) are demonstrated by a nanoscale epitaxial lateral overgrowth (NELO) method on a SiO2 nanorod-array patterned sapphire substrate (NAPSS). The SiO2 NAPSS was fabricated by a self-assembled Ni nano clusters and reactive ion etching. The average diameter and density of the formed SiO2 nanorod-array was about 100 to 150 nm and 3 x 109 cm-2. The transmission electron microscopy images suggest that the voids between SiO2 nanorods and the stacking faults introduced during the NELO of GaN can effectively suppress the threading dislocation density. The output power and external quantum efficiency of the fabricated LED by NELO method on NAPSS were enhanced by 52％ and 56％ respectively, compared to those of a conventional LED. The improvements originated from both the enhanced light extraction assisted by the NAPSS, and the reduced dislocation densities using the NELO method.
GaN Epitaxial Lateral Overgrowth Nanorod-Array Patterned Sapphire Substrates
C.H.Chiu C.L.Chao M.H.Lo Y.J.Cheng H.C.Kuo P.C.Yu T.C.Lu S.C.Wang K.M.Lau
Department of Photonics and Institute of Electro-Optical Engineering,National Chiao-Tung University, Research Center for Applied Sciences,Academia Sinica,Taipei,Taiwan,R.O.C. Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology,Kow
国际会议
2008亚太光通信会议(Asia-Pacific Optical Communications 2008)
杭州
英文
2008-10-26（万方平台首次上网日期，不代表论文的发表时间）