Strain Relaxation Characteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling
A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Calculations based on the valence force field method suggest that the spatial variation of the strain tensors in the nanopillar results in the observed energy shift and spectrum broadening. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.
Strain relaxation nanopillar focused ion beam InGaN/GaN
Peichen Yu Min-An Tsai Ching-Hua Chiu Hao-chung Kuo Yuh-Renn Wu
Department of Photonics and Institute of Electro-Optical Engineering,National Chiao-TungUniversity,1 Department of Electrophysics,National Chiao-Tung University,Hsinchu,Taiwan,R.O.C. Institute of Photonics and Optoelectronics and Department of Electrical Engineering,National Taiwan
国际会议
2008亚太光通信会议(Asia-Pacific Optical Communications 2008)
杭州
英文
2008-10-26（万方平台首次上网日期，不代表论文的发表时间）