AlGaInAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd:YVO4 laser at 1064 nm

摘要：

We report the use of AlGaInAs quantum wells (QWs) as a saturable absorber in the Q-switching of a high-power diode-pumped Nd-doped 1064nm laser. The barrier layers are designed to locate the QW groups in the region of the nodes of the lasing standing wave for avoiding damage. With an incident pump power of 22 W at 878nm, an average output power of 6.8 W with a Q-switched pulse width of 0.85 ns at a pulse repetition rate of 105kHz was obtained.

作者: S.C.Huang H.L.Chang K.W.Su Y.F.Chen K.F.Haung

作者单位: Department of Electrophysics,National Chiao Tung University,Hsinchu,Taiwan

会议类型: 国际会议

会议名称: 2008亚太光通信会议(Asia-Pacific Optical Communications 2008)

会议地点: 杭州

会议语种:英文

在线出版日期: 2008-10-26（万方平台首次上网日期，不代表论文的发表时间）