The Effect of Argon Ion Implantation and Preanodization Argon Ion Implantation on Photoluminescence of Porous Silicon

摘要：

Photoluminescence of Ar+ implanted porous silicon and porous structure of Ar+-implanted silicon (porous silicon by preanodization ion implantation) at energy of middle-energy (30keV) are investigated to gain insight into the photoluminescence properties and photoluminescence mechanism. The results show that the photoluminescence intensity of Ar+ implanted porous silicon was reduced, which was attributed to the removal of surface oxygen and creation of defects that act as nonradiative recombination; And whether samples were prepared by p-type or n-type silicon wafers, the photoluminescence intensity of porous structure of Ar+-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and oxygen-related defects were increased.

关键词： argon ion implantation porous silicon photoluminescence

作者: Xiao-yi Lü Tao Xue Zhen-hong Jia

作者单位: School of Electronic and Information Engineer; Xi′an Jiao tong University; Xi′an710049,China; School of physics,Xinjiang University,Urumqi 830046,China; College of Information science & engineering,Xinjiang University,Urumqi 830046,China

会议类型: 国际会议

会议名称: 2008亚太光通信会议(Asia-Pacific Optical Communications 2008)

会议地点: 杭州

会议语种:英文

在线出版日期: 2008-10-26（万方平台首次上网日期，不代表论文的发表时间）