Terahertz wave dielectric properties of P-type silicon
We have measured the absorption spectrum of three kind resistivity p-type silicons by backward-wave oscillator (BWO).The absorption spectrum is examined and analyzed by least square method. The refractive index, absorption coefficient, and dielectric functions of various resistivity p-type silicons are obtained in the frequency range extending from 0.23 THz to 0.375 THz. The experimental results indicate that the absorption coefficient of the p-type silicons are decreased with the resistivity increase and its least absorption coefficient equals 3.87×10-4 cm-1. Our results demonstrate that the applicability of the backward-wave oscillator THz absorption spectroscopy to p-type silicon characteristic analysis by calculating the absorption spectra. This work establishes the basic spectra data for the various resistivity ptype silicons are very significative to design the terahertz waveguide with low loss.
terahertz wave p-type silicon absorption coefficient
Li Jiusheng Li Jianrui ZhaoXiaoli
School of Information Engineering,China Jiliang University,Hangzhou 310018,China
国际会议
2008亚太光通信会议(Asia-Pacific Optical Communications 2008)
杭州
英文
2008-10-26（万方平台首次上网日期，不代表论文的发表时间）