会议专题

Compact Optical Modulator based on Carrier Induced Gain of an InP/InGaAsP Micro-disk Cavity Integrated on SOI

A compact electro-optic modulator on silicon-on-insulator is presented. The structure consists of a III-V microdisk cavity heterogeneously integrated on a silicon-on-insulator wire waveguide. By modulating the loss of the active layer included in the cavity through carrier injection, the power of the transmitted light at the resonant wavelength is modulated. ~10 dB extinction ratio and 2.73 Gbps dynamic operation are demonstrated without using any special driving techniques. The results are consistent with the theoretical simulations.

silicon-on-insulator heterogeneous integration electro-optic modulator carrier injection

Liu Liu Roel Baets Joris Van Campenhout Günther Roelkens Richard Soref Dries Van Thourhout Pedro Rojo-Romeo Philippe Regreny Christian Seassal Jean-Marc Fédéli

Photonics Research Group,Department of Information Technology (INTEC),Ghent University—IMEC,St-Piete Photonics Research Group,Department of Information Technology (INTEC),Ghent University— IMEC,St-Piet Currently with IBM T.J.Watson Research Center,1101 Kitchawan Rd.,Yorktown Heights,NY10598,USA; Air Force Research Laboratory,Sensors Directorate,Hanscom AFB,MA 01731,USA; Université de Lyon; Institut des Nanotechnologies de Lyon INL-UMR5270,CNRS,Ecole Centralede Lyon,Ecu CEA/Léti—Minatec,17 rue des Martyrs,308054 Grenoble,France

国际会议

2008亚太光通信会议(Asia-Pacific Optical Communications 2008)

杭州

英文

2008-10-26(万方平台首次上网日期,不代表论文的发表时间)