Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on (001)GaAs by LP-MOCVD
High quality zinc-blende BxGa1-xAs, BxAl1-xAs, BxGa1-x-yInyAs epilayers and relevant MQW structures containing 10-period BGaAs(10nm)/GaAs(50nm) and BGaInAs(10nm)/GaAs(50nm) have been successfully grown on exactly-oriented (001)GaAs substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium, trimethylaluminium, trimethylindium and arsine were used as the precursors. Boron incorporation behaviors have been studied as a function of growth temperature and gas-phase triethylboron mole fraction. In this study, the maximum boron composition x of 5.8％ and 1.3％ was achieved at the same growth temperature of 580oC for bulk BxGa1-xAs and BxAl1-xAs, respectively. 11K photoluminescence (PL) peak wavelength of lattice-matched BxGa1-x-yInyAs epilayer with boron composition of about 4％ reached 1.24μm.
MOCVD Triethylboron (TEB) BGaAs BAlAs BGaInAs MQW
Qi Wang Xiaomin Ren Yongqing Huang Hui Huang Shiwei Cai Xia Zhang
Key Laboratory of Optical Communication & Lightwave Technologies,Ministry of Education,Beijing University of Posts and Telecommunications,Beijing 100876,P.R.China
国际会议
2008亚太光通信会议(Asia-Pacific Optical Communications 2008)
杭州
英文
2008-10-26（万方平台首次上网日期，不代表论文的发表时间）