High performance blue light-emitting diodes on patterned Si substrate

摘要：

High quality crack-free GaN layers were successfully grown and the InGaN/GaN based blue LEDs fabricated on patterned Si (111) substrates. In addition to using the patterned growth technique, thin AlN and SiNx interlayers grown at high temperatures were also employed to partially release the residual stress and to further improve the crystalline quality. 300 μm square blue LEDs fabricated on the islands, without thinning and package, exhibited a high output power of around 0.68 mW at a drive current of 20 mA.

关键词： Nitride Metalorganic chemical vapor deposition light-emitting diodes

作者: Zhanguo Li Guojun Liu Minghui You Lin Li Mei Li Baoshun Zhang Xiaohua Wang

作者单位: State Key Lab.,Changchun University of Science and Technology,No.7186weixing Road,

会议类型: 国际会议

会议名称: 2008亚太光通信会议(Asia-Pacific Optical Communications 2008)

会议地点: 杭州

会议语种:英文

在线出版日期: 2008-10-26（万方平台首次上网日期，不代表论文的发表时间）