Temperature Characteristics of several familiar Diode Lasers with Broad Area

摘要：

Temperature characteristics of several familiar high power diode lasers with broad area, whose wavelength was separately 808 nm, 810 nm, 940 nm and 980 nm, were analyzed. In order to see the effect the change of the quantum well structure on the characteristic temperatures, different structures were attempted. For the 808 nm structure, we tried different barrier thicknesses. For the 810 nm structure, different cavity lengths were attempted. And we studied the 940 nm and 980 nm also. In this paper, the widths of these devices were all 100 μm. Characteristic temperatures of these devices were calculated. The appropriate structure was available for different application.

关键词： Semiconductor diode lasers broad area temperature characteristics characteristic temperature quantum well structure threshold current power conversion efficiency

作者: Xuemei Liang Li Qin Chunfeng He Qiang Ma Yongqiang Ning Lijun Wang

作者单位: Lab.of Excited State Processes,Changchun Institute of Optics,Fine mechanics and Physics,Chinese Acad Lab.of Excited State Processes,Changchun Institute of Optics,Fine mechanics and Physics,Chinese Acad

会议类型: 国际会议

会议名称: 2008亚太光通信会议(Asia-Pacific Optical Communications 2008)

会议地点: 杭州

会议语种:英文

在线出版日期: 2008-10-26（万方平台首次上网日期，不代表论文的发表时间）