High Power 1064nm Laser Diode Array and Measuring Chip Temperature Based on Emitting Spectra

摘要：

High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle, the average driving power in the laser chip is quite low, so the heating effect cemiconductor laser is very small, using pulse injection can reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip temperature is developed. The temperature drift coefficient is 0. 45nm/ K

关键词： high power 1.06μm chip temperature pulse injection thermal resistance low duty cycle

作者: Xiangpeng Wang Zaijin Li Yun Liu Ye Wang Di Yao Lijun Wang

作者单位: State Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanicsand Phys State Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanicsand Phys State Key Laboratory of Excited State Processes,Changchun Institute of Optics,Fine Mechanics and Phy

会议类型: 国际会议

会议名称: 2008亚太光通信会议(Asia-Pacific Optical Communications 2008)

会议地点: 杭州

会议语种:英文

在线出版日期: 2008-10-26（万方平台首次上网日期，不代表论文的发表时间）