Influence of annealing environment on the Hydrogen related bonding structure in silicon nitride thin films containing silicon nanoparticles
The Si-rich SiNx:H films have been prepared by helicon wave plasma-enhanced chemical vapor deposition (HWP-CVD) technique. Parts of the samples have been post-annealed at 800 0C in the H2, FG (10％H2 in N2), and N2 ambient, respectively. Fourier transform infrared spectroscopy (FTIR) and the optical absorption spectroscopy have been used to investigate the influence of different annealing environment on the structural and optical properties of the films. After the thermal annealing process, there is a significant increase of Si–N bonding density. Meanwhile, the band related to hydrogen (N–H and Si–H) decreased which indicates that the hydrogen is effused out of the films during the annealing treatment. The Si–H stretching vibrations can be divided into three components by Gaussian distribution; the Si–H absorption band at different wave numbers corresponds to different configurations. The changes of the three peaks contributions decreased indicate that the configurations of the Si–H stretching vibrations band occurs restructuring in the different annealing environments. Furthermore, the investigation of the optical absorption spectroscopy suggests that the band gap Eg decreased after the thermal annealing process. The decreased optical gap should be related to the loss of hydrogen and the slightly increase in the mean size of silicon nanoparticles, which is in good agreement with that of the hydrogen bonding structure.
annealing FTIR silicon nanoparticles energy gap bonding structure bonding density silicon nanostructures,silicon nitride film
DING Wenge QI Wenhao LU Wanbing ZHANG Zicai YU Wei FU Guangsheng
College of Physics Science and Technology,Hebei University,Baoding 071002,P.R.China
国际会议
2008亚太光通信会议(Asia-Pacific Optical Communications 2008)
杭州
英文
2008-10-26（万方平台首次上网日期，不代表论文的发表时间）