Pulse-LDA-pumped passively Q-switched Nd:YVO4 laser with GaAs as saturable absorber

摘要：

A passively Q-switched pulse-LDA (laser diode array)-pumped Nd:YVO4 laser using As＋ implanted GaAs as the saturable absorber is demonstrated. In the experiment, a Q-switching pulse width 7ns with a pulse energy 23.5μJ is achieved which, to our knowledge, is the shortest pulse width in a passively Q-switched Nd:YVO4 laser using GaAs as saturable absorber. The laser emits only one Q-switching pulse during each pump-pulse time with a Q-switching efficiency of 26.8％. We also investigate the characteristics of the Q-switched pulse by adjusting the pumping pulse energy, pulse width and pulse repetition rate respectively. The experimental results are discussed as well in the paper.

关键词： laser diode array (LDA) As＋ implanted GaAs passively Q-switch Nd:YVO4 crystal

作者: Liu Xiaojuan Fu Shenggui

作者单位: School of Science,Shandong University of Technology,Shandong Zibo,255049,China

会议类型: 国际会议

会议名称: 2008亚太光通信会议(Asia-Pacific Optical Communications 2008)

会议地点: 杭州

会议语种:英文

在线出版日期: 2008-10-26（万方平台首次上网日期，不代表论文的发表时间）