Analysis and Simulation of Process Parameters for Epitaxy of InP-based Compound Semiconductor Materials
Under a wide range of process parameters, such as varying total flow rate of gas inlet, chamber pressure, growth temperature, wafer carrier rotation, it has been finally obtained the favorable conditions of the better uniform distributions of steady flow and thermal field profiles for growing high quality compound semiconductor materials inside the reactor. Then, the long-wavelength metamorphic In0.53Ga0.47As PIN photodetectors grown on semi-insulating GaAs substrates are successfully demonstrated by low temperature InP buffer technology．The active area of this photodetector is 50μm×50μm and the thickness of In0.53Ga0.47As adsorption layer is 300 nm. The 3dB bandwidth of frequency response reaches 6GHz. The responsivity of 0.12 A/W to 1550 nm optical radiation, corresponding to the external quantum efficiency of 9.6％, was achieved．
optoelectronic devices thin film growth MOCVD reactor transport process
Shuquan Zhong Xiaomin Ren Yongqing Huang Qi Wang Hui Huang
(Key Laboratory of Optical Communication & Lightwave Technologies of Ministryof Education,Beijing Un (Key Laboratory of Optical Communication & Lightwave Technologies of Ministry of Education,Beijing U
国际会议
2008亚太光通信会议(Asia-Pacific Optical Communications 2008)
杭州
英文
2008-10-26（万方平台首次上网日期，不代表论文的发表时间）