Inductively coupled plasma etching of In1-x-yAlxGayAs in BCl3/Cl2/Ar

摘要：

In this paper, dry etching of In0.8Al0.2As/In0.8Ga0.2As/In1-xAlxAs (In1-x-yAlxGayAs) epitaxy material was studied in BCl3/Cl2/Ar inductively coupled plasma (ICP). Etching behavior was characterized by varying the BCl3/Cl2/Ar mixing ratio, ICP power or DC-bias. The results indicate that, in Cl2 dominant condition, smooth surfaces are achieved with mean etch rate exceeding 2 μm/min. As the ratio of BCl3 increasing, the etch rates decrease monotonously and the surfaces becomes rougher because of low volatility InClx etch product. ICP power influences the etch rates, and the etch rates increase monotonously with DC-bias. The result is useful for the fabrication of extended long-wavelength response optoelectronic InGaAs devices.

关键词： ICP InGaAs InAlAs BCl3/Cl2/Ar

作者: NING Jinhua ZHANG Kefeng TANG Hengjing WANG Yang LI Xue

作者单位: State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, ChineseAca State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, ChineseAca

会议类型: 国际会议

会议名称: 2008亚太光通信会议(Asia-Pacific Optical Communications 2008)

会议地点: 杭州

会议语种:英文

在线出版日期: 2008-10-26（万方平台首次上网日期，不代表论文的发表时间）