Deposition of nanocrystalline SiC films using helicon wave plasma enhanced chemical vapor deposition
Hydrogenated nanocrystalline SiC films have been deposited by using helicon wave plasma enhanced chemical vapor deposition (HW-PECVD) in H2, SiH4 and CH4 gas mixtures at different RF powers. Their structural and optical properties have been investigated by Fourier transform infrared absorption (FTIR), atomic force microscopy (AFM) and ultraviolet-visible (UV-VIS) transmission spectra. The results indicate that RF power has an important influence on properties of the deposited films. It is found that in a 300 oC low substrate temperature, only amorphous SiC can be deposited at the radio frequency (RF) power of lower than 400 W, while nanocrystalline SiC can be grown at the RF power of equal to or higher than 400 W. The analyses show that the high plasma density of helicon wave plasma source and the high hydrogen dilution condition are two key factors for depositing nanocrystalline SiC films at a low temperature.
silicon carbide nanocrystalline helicon wave plasma RF power
Wanbing Lu Wei Yu Luo Ma Liping Wu Guangsheng Fu
College of Physics Science and Technology,Hebei University,Baoding 071002,China
国际会议
2008亚太光通信会议(Asia-Pacific Optical Communications 2008)
杭州
英文
2008-10-26（万方平台首次上网日期，不代表论文的发表时间）